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| AP2451GY Pb Free Plating Product Advanced Power Electronics Corp. Capable of 2.5V gate drive Lower on-resistance Surface mount package D2 D2 D1 D1 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) G2 S2 G1 S1 20V 37m 5A -20V 75m -3.7A ID P-CH BVDSS RDS(ON) ID 2928-8 Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The 2928-8 J-lead package provides good on-resistance performance and space saving like TSOP-6. G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 20 12 5 4 20 1.38 0.01 -55 to 150 -55 to 150 P-channel -20 12 -3.7 -3 -20 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit /W Data and specifications subject to change without notice 200119051 AP2451GY N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS BVDSS/Tj o Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 20 0.5 - Typ. 0.02 13 9 1.5 4 9 10 16 5 620 120 100 1.2 Max. Units 32 37 55 1.2 1 10 100 15 990 1.8 V V/ m m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6A VGS=4.5V, ID=5A VGS=2.5V, ID=3A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=5V, ID=5A VDS=20V, VGS=0V VDS=16V, VGS=0V VGS=12V ID=5A VDS=16V VGS=4.5V VDS=10V ID=1A RG=3.3,VGS=10V RD=10 VGS=0V VDS=20V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=1.2A, VGS=0V IS=5A, VGS=0V dI/dt=100A/s Min. - Typ. 20 11 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge AP2451GY P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-4A VGS=-4.5V, ID=-3A VGS=-2.5V, ID=-1A Min. -20 -0.5 - Typ. 0.01 10 11 2 4 10 16 26 16 740 160 130 6.6 Max. 57 75 105 -1.2 -1 -10 100 18 1180 10 Unit V V/ m m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C) o o VDS=VGS, ID=-250uA VDS=-5V, ID=-3A VDS=-20V, VGS=0V VDS=-16V ,VGS=0V VGS=12V ID=-3A VDS=-16V VGS=-4.5V VDS=-10V ID=-1A RG=3.3,VGS=-5V RD=10 VGS=0V VDS=-20V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=-1.2A, VGS=0V IS=3A, VGS=0V, dI/dt=100A/s Min. - Typ. 29 20 Max. -1.2 - Unit V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board , t <5sec ; 155/W at steady state. AP2451GY N-Channel 20 20 T A =25 C 16 o ID , Drain Current (A) ID , Drain Current (A) 5.0 V 4.5 V 3.5 V 2.5 V T A = 150 o C 16 5.0 V 4.5 V 3.5 V 2.5 V 12 12 8 8 4 4 V G = 1.5 V V G = 1.5 V 0 0 1 2 3 0 0 1 2 3 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 45 1.8 40 I D =3A Normalized RDS(ON) T A =25 o C 1.4 I D =5A V G =4.5V RDS(ON) (m ) 35 1.0 30 25 2 4 6 8 10 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 5 4 Normalized VGS(th) (V) 1.2 1.1 3 IS(A) T j =150 o C 2 T j =25 o C 0.7 1 0 0.3 0 0.2 0.4 0.6 0.8 1 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP2451GY N-Channel f=1.0MHz 12 1000 VGS , Gate to Source Voltage (V) ID=5A V DS = 16 V 9 C iss C (pF) C oss 100 6 C rss 3 0 0 4 10 Q G , Total Gate Charge (nC) 8 12 16 20 1 5 V DS , Drain-to-Source Voltage (V) 9 13 17 21 25 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 Normalized Thermal Response (Rthja) 0.2 10 100us 1ms ID (A) 1 0.1 0.1 0.05 0.02 0.01 10ms 0.1 PDM Single Pulse 0.01 t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =155o C/W T A =25 o C Single Pulse 100ms 1s DC 10 100 0.01 0.1 1 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 V DS =5V ID , Drain Current (A) T j =25 o C 20 VG T j =150 o C QG 4.5V QGS QGD 10 Charge 0 0 2 4 6 Q V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform AP2451GY P-Channel 20 20 T A = 25 C -ID , Drain Current (A) 15 o -5.0 V - 4.5 V - 3.5 V -ID , Drain Current (A) T A = 150 C 16 o -5.0 V - 4.5 V - 3.5 V - 2.5 V 10 12 - 2.5 V 8 5 4 V G = - 1.5 V 0 0 1 2 3 4 0 0 1 2 V G = - 1.5 V 3 4 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 90 1.5 I D = -1 A T A =25 C Normalized R DS(ON) 70 o I D = -3 A V G = -4.5 V 1.2 RDS(ON) (m ) 50 0.9 30 0.6 2 4 6 8 10 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 4 Normalized -VGS(th) (V) 3 1.1 -IS(A) 2 T j =150 o C T j =25 o C 0.7 1 0 0.3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP2451GY P-Channel f=1.0MHz 12 1000 10 -VGS , Gate to Source Voltage (V) I D =-3A V DS =-16V C iss 8 6 4 C (pF) C oss 2 C rss 0 0.0 3.0 6.0 9.0 12.0 15.0 18.0 21.0 100 1 5 9 13 17 21 25 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor =0.5 Normalized Thermal Response (Rthja) 0.2 10 100us 1ms 0.1 0.1 0.05 -ID (A) 1 0.02 0.01 10ms 100ms 1s DC PDM 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=155oC/W 0.1 T A =25 o C Single Pulse 0.01 0.1 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 V DS =-5V -ID , Drain Current (A) T j =25 o C 20 VG T j =150 o C QG -4.5V QGS QGD 10 Charge 0 0 2 4 6 Q -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform |
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